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Found 39 results for any of the keywords and epitaxy. Time 0.047 seconds.
Ganwafer – One of Semiconductor Wafer Manufacturing CompaniesGanwafer is a top-class enterprise for compound semiconductor material integrating semiconductor crystal growth, process development, and epitaxy.
Wafer Supplier of Compound Semiconductor Materials and Epi ServiceGanwafer, as a semiconductor wafer supplier, offers semiconductor substrate and epitaxial wafers of SiC, GaN, III-V group compound and etc.
Compound Semiconductor Materials: SiC, GaN, III-V Group MaterialCompound semiconductor materials including III-V wafers, SiC, GaN and other semiconductor wafers are offered with low defect density
GaN Wafer Including Substrate, Template Epitaxy WaferGaN (gallium nitride) wafer – wide band gap material provides higher efficiency and power density for gallium nitride chips.
Semiconductor wafer,Single Crystal wafer,wafer substrate-XIAMEN POWERWPAM-XIAMEN produce wide range of Compound Semiconductor Wafer and LED wafer substrate - single crystal wafer: Silicon Carbide Wafer(Substrate), Gallium Nitride Wafer(Substrate), Gallium Nitride HEMT,GaAs Wafer(Substrate)
Technology for Manufacturing SiC, GaN, III-V Semiconductor WafersTechnology: HVPE, MOCVD, MBE, etc are used by semiconductor wafer fabs to grow SiC wafers, GaN wafers, III-V wafers with low defects and low impurity.
AlGaN / GaN on Silicon HEMT Wafer with High 2DEG MobilityGaN on silicon substrate wafer is offered with HEMT or template structure used in D-mode / E-mode power or RF application.
Freestanding GaN (Gallium Nitride) Substrate Grown by HVPEFree-standing GaN substrate wafer with low dislocation density, uniform surface and low defect density is for UHB-LED and LD.
GaN on SiC (Silicon Carbdie) HEMT Wafer for RF or PowerThe transport performance of heterostructure 2DEG GaN on SiC substrate wafer is better than GaN on Si / sapphire substrate.
Epi-ready Semi-Insulating Freestanding GaN (Gallium Nitride) SubstrateSemi-insulating Freestanding GaN (Gallium Nitride) Substrate grown by HVPE is less or free macro defect density for RF device.
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